HAT2132H_15 Datasheet, PDF (7/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HAT2132H
Reverse Drain Current vs.
Source to Drain Voltage
10
8
6
4
10 V
2
5V
V_GS = 0
Pulse Test
0
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Gate to Source Cutoff Voltage vs.
Case Temperature
5
V_DS = 10 V
4
I_D = 10 mA
1 mA
3
2
0.1 mA
1
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 _0.1
0.05
0.03
0.02
0.01
1shot ^pulse
0.01
10 µ
100 µ
θch – c (t) = γ s (t) • θch – c
θch – c = 6.25°C/W, Tc = 25°C
P_DM
D = ^PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Switching Time Waveform
Vin Monitor
10 Ω
D.U.T.
Vout
Monitor
R_L
Vin
10 V
V_DD
= 100 V
Vin
Vout
10%
10%
td(on)
90%
tr
90%
90%
td(off)
10%
tf
Rev.3.00 Dec 07, 2006 page 5 of 6