HAT2132H_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HAT2132H
Static Drain to Source on State Resistance
vs. Temperature
2.5
V_GS = 10 V
Pulse Test
2.0
1.5
5A
1.0
I_D = 8 A
0.5
2A
0
–40
0
40
80 120 160
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
10
0.1 0.3 1
3 10 30 100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
400
16
I_D = 6 A
300
V_DD = 50 V
100 V
160 V
V_GS
12
200
8
V_DS
100
0
0
V_DD = 160 V
4
100 V
50 V
0
20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
100
V_DS = 10 V
Pulse Test
30
Tc = –25°C
10
3
25°C
1
75°C
0.3
0.1
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
5000
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
200
100
Coss
50
20
Crss
10
5
0 20 40 60 80 100
Drain to Source Voltage V_DS (V)
1000
300
Switching Characteristics
V_GS = 10 V, V_DD = 100 V
PW = 10 µs, duty ≤ 1 %
Rg = 10 Ω
100
30 td(on)
10
tr
3
td(off)
tf
1
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
Rev.3.00 Dec 07, 2006 page 4 of 6