HAT2132H_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HAT2132H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
10
10 V
8
6
8V
6.5 V
Pulse Test
6V
4
5.5 V
2
V_GS = 5 V
0
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
10
Pulse Test
8
6
4
I_D = 8 A
5A
2
2A
0
0
4
8
12 16
20
Gate to Source Voltage V_GS (V)
Rev.3.00 Dec 07, 2006 page 3 of 6
Maximum Safe Operation Area
100
30
10
100
10
µ_s
µ_s
3
1
0.3
Operation in
0.1 _{this area is}
0.03
limited by R_{DS (on)}
Ta = 25°C
0.01
0.1 0.3 1 3 10 30 100 300 1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
10
V_DS = 10 V
Pulse Test
8
6
4
Tc = 75°C
2
0
0
2
4
25°C
–25°C
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
5
2
1
0.5 ^{VGS = 10 V, 15 V}
0.2
0.1
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current I_D (A)