HAT2077R_15 Datasheet, PDF (7/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HAT2077R
Reverse Drain Current vs.
Source to Drain Voltage
20
16
12
8
10 V
4 _5V
V_GS = 0 V
Pulse Test
0
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Gate to Source Cutoff Voltage
vs. Case Temperature
5
I_D = 10 mA
4
1 mA
3
0.1 mA
2
1
0
–40 0
V_DS = 10 V
40 80 120 160
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.2
0.1 _0.1
0.05
0.02
0.01 _0.01
0.001
1shot ^pulse
θch – f (t) = γ s (t) • θch – f
θch – f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
P_DM
D=
PW
T
PW
T
0.0001
10 µ 100 µ 1 m 10 m 100 m
1
10
100 1000 10000
Pulse Width PW (S)
Switching Time Test Circuit
Switching Time Waveform
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
R_L
V_DS
= 100 V
Vin
Vout
10%
10%
td(on)
90%
tr
90%
90%
td(off)
10%
tf
Rev.2.00 Sep 07, 2005 page 5 of 6