HAT2077R_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HAT2077R
Main Characteristics
Power vs. Temperature Derating
4
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3
2
1
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
20
10 V
8V
16
Pulse Test
6V
12
8
5.5 V
4
5V
V_GS = 4.5 V
0
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1.0
Pulse Test
0.8
0.6
I_D = 3 A
0.4
2A
0.2
1A
0
0
4
8
12 16
20
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
100
10 µs
10
1
0.1
0.01
TOtlihmapisie=teara2dret5Diboa°CyCniOsRipne^{DrSatP(iooWnn)(=PW10≤m1s10(1ms1)0Nss0ohtoeµt4s)}
1 shot Pulse
0.001
0.1 0.3 1 3 10 30 100 300 1000
Drain to Source Voltage V_DS (V)
Note 4:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
16
12
8
Tc = 75°C
4
25°C
–25°C
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Pulse Test
V_GS = 10 V, 15 V
0.2
0.1
0.05
0.02
0.01
0.1 0.2 0.5 1 2 5 10 20 50
Drain Current I_D (A)