HAT2077R_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HAT2077R
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
V_GS = 10 V
0.4
I_D = 3 A
1A
0.3
2A
0.2
0.1
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
10
0.1 0.3
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
500
20
I_D = 3 A
400
V_DD = 160 V
100 V
300
50 V
16
V_GS
12
200 V_DS
8
100
0
0
V_DD = 160 V
4
100 V
50 V
0
8
16 24 32 40
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = –25°C
10
5
75°C
2
25°C
1
0.5
0.2
0.1
0.1 0.2 0.5 1 2
V_DS = 10 V
Pulse Test
5 10 20 50
Drain Current I_D (A)
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
Ciss
500
200
100
Coss
50
Crss
20
10 ^VGS ^{= 0}
f = 1 MHz
5
0
20 40 60 80 100
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
V_GS = 10 V, V_DD = 100 V
200
PW = 5 µs, duty ≤ 1 %
Rg = 10 Ω
100
50
td(off)
20 _td(on)
10
5 tr
tf
2
1
0.1 0.2 0.5 1 2 5 10 20 50
Drain Current I_D (A)
Rev.2.00 Sep 07, 2005 page 4 of 6