HAT2028R_15 Datasheet, PDF (7/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2028R, HAT2028RJ
Reverse Drain Current vs.
Source to Drain Voltage
20
16
V_GS = 5 V
12
0, –5 V
8
Maximum Avalanche Energy vs.
Channel Temperature Derating
2.5
I_AP = 4 A
V_DD = 25 V
2.0
L = 100 µH
duty < 0.1 %
Rg ≥ 50 Ω
1.5
1.0
4
0.5
Pulse Test
0
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
D=1
1
0.5
0.2
0.1 _0.1
0.05
0.02
0.01 _0.01
0.001
1shot ^pulse
θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
P_DM
D=
PW
T
PW
T
0.0001
10 µ 100 µ 1 m 10 m 100 m
1
10
100 1000 10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
D=1
1
0.5
0.2
0.1 _0.1
0.05
0.02
0.01 _0.01
0.001
1shot ^pulse
0.0001
10 µ 100 µ 1 m
θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
P_DM
D = ^PW
T
PW
T
10 m 100 m
1
10
Pulse Width PW (S)
100 1000 10000
Rev.5.00 Sep 07, 2005 page 5 of 7