HAT2028R_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2028R, HAT2028RJ
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3.0
2.0
1.0
1 _{Drive Operation}
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
20 _{10 V}
8V
16
6V
12
8
Pulse Test
5V
4.5 V
4V
3.5 V
3V
4
V_GS = 2.5 V
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.4
0.3
0.2
I_D = 2 A
0.1
1A
0
0.5 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Rev.5.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
100
10 µs
30
10
100 _µs
3
1
0.3
0.1
OtlihmpisietearadretiboaynisRiDn_D^C_S^O_(o^p_n^e₎^{raPtWion=(1P0W1m}_≤^ms1_N^s0_otes)6
Ta = 25°C
0.03 _{1 shot Pulse}
1 Drive Operation
0.01
0.1 0.3 1 3
10 30 100
Drain to Source Voltage V_DS (V)
Note 6:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
20
–25°C
16
25°C
12
Tc = 75°C
8
4
V_DS = 10 V
Pulse Test
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
V_GS = 4 V
0.1
10 V
0.05
0.02
0.01
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)