HAT2028R_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2028R, HAT2028RJ
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
0.20
0.15
I_D = 0.5 A, 1 A, 2 A
V_GS = 4 V
0.10
0.5 A, 1 A, 2 A
0.05
10 V
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
0.1 0.2
di / dt = 50 A / µs
V_GS = 0, Ta = 25°C
0.5 1 2
5 10
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
100
20
I_D = 4 A
80
16
60
V_DS
40
V_DD = 10 V
25 V
50 V
12
8
V_GS
20
V_DD = 50 V
4
25 V
10 V
0
0
0
2
4
6
8
10
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
20
10
Tc = –25°C
25°C
5
2
75°C
1
0.5
0.2
0.2
V_DS = 10 V
Pulse Test
0.5 1 2
5 10 20
Drain Current I_D (A)
1000
500
200
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
100
Coss
50
Crss
20
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
300
100
tr
tf
30
td(off)
10
td(on)
3
1
0.1 0.2
V_GS = 4 V, V_DD = 30 V
PW = 3 µs, duty ≤ 1 %
0.5 1 2
5 10
Drain Current I_D (A)
Rev.5.00 Sep 07, 2005 page 4 of 7