HAT1036R_15 Datasheet, PDF (7/9 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET Power Switching

HAT1036R
Reverse Drain Current vs.
Source to Drain Voltage
50
–10 V
40
30
–5 V
V_GS = 0
20
10
Pulse Test
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V_SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.2
0.1 _0.1
0.05
0.02
0.01 _0.01
0.001 _{1shot pulse}
θch – f (t) = γ s (t) • θch – f
θch – f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
P_DM
D = ^PW
T
PW
T
0.0001
10 µ 100 µ 1 m 10 m 100 m
1
10
100 1000 10000
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
–4 V
50 Ω
V_DD
= –10 V
Switching Time Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
tf
Rev.7.00 Sep 07, 2005 page 5 of 6