HAT1036R_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET Power Switching

HAT1036R
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3.0
2.0
1.0
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–50
–10 V
–5 V
–40
–4 V
Pulse Test
–30
–3.5 V
–20
–10
V_GS = –3 V
0
0
–2 –4 –6 –8 –10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.5
Pulse Test
–0.4
–0.3
–0.2
–0.1
0
0
I_D = –10 A
–5 A
–2 A
–4 –8 –12 –16 –20
Gate to Source Voltage V_GS (V)
Rev.7.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
–500
–100
10 µs 100 µs
–10
–1
–0.1
OtlihmpisietearadretibaoDyniCsRinO_D^p_S^er₍^a_o^t_n^io₎^nP(PWW=_≤^1100N1mo_smt)e^ss₄
Ta = 25°C
1 shot pulse
–0.01
–0.1 –0.3 –1 –3 –10 –30
–100
Drain to Source Voltage V_DS (V)
Note 4:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
–50
V_DS = –10 V
Pulse Test
–40
–30
–20
–10
0
0
Tc = 75°C
25°C
–25°C
–1 –2 –3 –4 –5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
V_GS = –4 V
20
10
–10 V
5
2
1
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50 –100
Drain Current I_D (A)