HAT1036R_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET Power Switching

HAT1036R
Static Drain to Source on State Resistance
vs. Temperature
50
Pulse Test
40
I_D = –2 A, –5 A, –10 A
30
V_GS = –4 V
20
10
0
–40
–10 V
–2 A, –5 A, –10 A
0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
10
–0.1 –0.2
–0.5
di / dt = 20 A / µs
V_GS = 0, Ta = 25°C
–1 –2 –5 –10 –20
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
0
0
V_DD = –5 V
–10 V
–10
–25 V
–4
–20
–30 ^VDS
V_GS
–8
V_DD = –25 V
–10 V
–5 V
–12
–40
–16
I_D = –12 A
–50
0
40 80
120 160
Gate Charge Qg (nc)
–20
200
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25°C
10
75°C
3
25°C
1
0.3
V_DS = –10 V
Pulse Test
0.1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current I_D (A)
10000
3000
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
300
Crss
100
30
V_GS = 0
f = 1 MHz
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage V_DS (V)
1000
500
Switching Characteristics
tr
200
100 _td(on)
50
tf
td(off)
20 _{VGS = –4 V, VDS = –10 V}
Rg = 50 Ω, duty ≤ 1 %
10
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20
Drain Current I_D (A)
Rev.7.00 Sep 07, 2005 page 4 of 6