FY3ABJ-03_15 Datasheet, PDF (7/7 Pages) Renesas Technology Corp – HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
–10
Tch = 25°C
Pulse Test
ID = –3A
–8
–6
VDS =
–10V
–20V
–4
–25V
–2
0
0
8
16 24 32 40
GATE CHARGE Qg (nC)
MITSUBISHI Pch POWER MOSFET
FY3ABJ-03
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–20
VGS = 0V
Pulse Test
–16
Tc = 25°C
–12
75°C
125°C
–8
–4
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10¹
7 ^{VGS = –10V}
ID = –3A
5
4
Pulse Test
3
2
10⁰
7
5
4
3
2
10^–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
–2.0
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
VDS = –10V
ID = –1mA
–1.6
–1.2
–0.8
–0.4
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = –1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10²
7
5 D = 1.0
3
2
0.5
10^{1 0.2}
7
5
0.1
3 0.05
2
10⁰
7
5
3
2
10^–1
7
5
3
2
0.02
0.01
Single Pulse
PDM
tw
T
D= ^tw
T
10^–2
10^–4 2 3 5710^–3 2 3 5710^–2 2 3 5710^–1 2 3 5710⁰ 2 3 5710¹ 2 3 5710² 2 3 5710³
PULSE WIDTH tw (s)
Sep.1998