FY3ABJ-03_15 Datasheet, PDF (6/7 Pages) Renesas Technology Corp – HIGH-SPEED SWITCHING USE

–5.0
–4.0
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
Tc = 25°C
Pulse Test
–3.0
–2.0
ID = –24A
–1.0
0
0
–3A
–2 –4
–6A
–6
–10A
–8 –10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–20
–16
Tc = 25°C
VDS = –10V
Pulse Test
–12
–8
–4
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
3
Ciss
2
10³
7
5
3
Coss
2
Crss
10²
7
5
VGS = 0V
f = 1MHZ
3
Tch = 25°C
2
–5
–7–10^–1
–2
–3
–5–7–10⁰
–2 –3
–5–7–10¹
–2 –3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FY3ABJ-03
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
200
Tc = 25°C
Pulse Test
VGS = –4V
160
120
80
–10V
40
0
–10^–1 –2 –3 –5–7–10⁰ –2 –3 –5–7–10¹ –2 –3 –5
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
10²
7
VDS = 10V
Pulse Test
5
3
Tc =25°C 75°C 125°C
2
10¹
7
5
VDS = –10V
Pulse Test
3
2
10⁰
–5 –7–10⁰ –2 –3 –5 –7–10¹ –2 –3 –5
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
3
2
td(off)
10⁰
7
tf
5
3
tr
2
td(on)
10^–1
7
5
3
2
Tch = 25°C
VDD = –15V
VGS = –10V
RGEN = RGS = 50Ω
10^–_–²_{100 –2 –3 –5 –7–101 –2 –3 –5}
DRAIN CURRENT ID (A)
Sep.1998