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FY3ABJ-03_15 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – HIGH-SPEED SWITCHING USE
MITSUBISHI Pch POWER MOSFET
FY3ABJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = –1mA, VDS = 0V
VGS = ±20V, VDS = 0V
VDS = –30V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –3A, VGS = –10V
ID = –1.5A, VGS = –4V
ID = –3A, VGS = –10V
ID = –3A, VDS = –10V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –15V, ID = –1.5A, VGS = –10V, RGEN = RGS = 50Ω
IS = –1.7A, VGS = 0V
Channel to ambient
IS = –1.7A, dis/dt = 50A/µs
Limits
Unit
Min.
Typ. Max.
–30
—
—
V
—
—
±0.1 µA
—
—
–0.1 mA
–1.5
–2.0
–2.5
V
—
57
70
mΩ
—
102
160 mΩ
—
–0.17 –0.21 V
—
8
—
S
—
2100
—
pF
—
340
—
pF
—
195
—
pF
—
20
—
ns
—
20
—
ns
—
135
—
ns
—
50
—
ns
—
–0.77 –1.20 V
—
—
69.4 °C/W
—
70
—
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.5
2.0
1.5
1.0
0.5
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
–102
–7
–5
–3
–2
–101
–7
tw =
1ms
–5
–3
–2
10ms
–100
–7
–5
–3
–2
Tc = 25°C
Single Pulse
100ms
–10–1
–7
–5
DC
–3
–2
–10––210–2 –2 –3 –5–7–10–1–2 –3 –5–7 –100 –2 –3 –5–7 –101 –2 –3 –5–7 –102
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
–50
VGS = –10V
–8V
PD = 1.8W
–40
Tc = 25°C
Pulse Test
–6V
–30
–5V
–20
–10
–4V
OUTPUT CHARACTERISTICS
(TYPICAL)
–20
VGS = –10V –8V –6V
PD = 1.8W
–5V
–16
–4V
–12
–8
Tc = 25°C
Pulse Test
–4
–3V
0
0 –1.0 –2.0 –3.0 –4.0 –5.0
DRAIN-SOURCE VOLTAGE VDS (V)
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998