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FY3ABJ-03_15 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – HIGH-SPEED SWITCHING USE | |||
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MITSUBISHI Pch POWER MOSFET
FY3ABJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = â1mA, VDS = 0V
VGS = ±20V, VDS = 0V
VDS = â30V, VGS = 0V
ID = â1mA, VDS = â10V
ID = â3A, VGS = â10V
ID = â1.5A, VGS = â4V
ID = â3A, VGS = â10V
ID = â3A, VDS = â10V
VDS = â10V, VGS = 0V, f = 1MHz
VDD = â15V, ID = â1.5A, VGS = â10V, RGEN = RGS = 50â¦
IS = â1.7A, VGS = 0V
Channel to ambient
IS = â1.7A, dis/dt = 50A/µs
Limits
Unit
Min.
Typ. Max.
â30
â
â
V
â
â
±0.1 µA
â
â
â0.1 mA
â1.5
â2.0
â2.5
V
â
57
70
mâ¦
â
102
160 mâ¦
â
â0.17 â0.21 V
â
8
â
S
â
2100
â
pF
â
340
â
pF
â
195
â
pF
â
20
â
ns
â
20
â
ns
â
135
â
ns
â
50
â
ns
â
â0.77 â1.20 V
â
â
69.4 °C/W
â
70
â
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.5
2.0
1.5
1.0
0.5
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
â102
â7
â5
â3
â2
â101
â7
tw =
1ms
â5
â3
â2
10ms
â100
â7
â5
â3
â2
Tc = 25°C
Single Pulse
100ms
â10â1
â7
â5
DC
â3
â2
â10ââ210â2 â2 â3 â5â7â10â1â2 â3 â5â7 â100 â2 â3 â5â7 â101 â2 â3 â5â7 â102
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
â50
VGS = â10V
â8V
PD = 1.8W
â40
Tc = 25°C
Pulse Test
â6V
â30
â5V
â20
â10
â4V
OUTPUT CHARACTERISTICS
(TYPICAL)
â20
VGS = â10V â8V â6V
PD = 1.8W
â5V
â16
â4V
â12
â8
Tc = 25°C
Pulse Test
â4
â3V
0
0 â1.0 â2.0 â3.0 â4.0 â5.0
DRAIN-SOURCE VOLTAGE VDS (V)
0
0 â0.4 â0.8 â1.2 â1.6 â2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998
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