BB505M Datasheet, PDF (7/9 Pages) Renesas Technology Corp – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB505M
S parameter
f (MHz)
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
S11
MAG
ANG
0.991
-2.4
0.991
-5.9
0.993
-8.9
0.983
-11.9
0.977
-15.3
0.969
-18.5
0.962
-21.6
0.952
-25.2
0.944
-28.7
0.929
-32.2
0.914
-36.0
0.897
-40.0
0.881
-44.2
0.863
-48.3
0.842
-52.7
0.819
-57.3
0.797
-62.0
0.775
-66.8
0.746
-71.8
0.721
-76.9
MAG
3.55
3.58
3.58
3.56
3.59
3.50
3.51
3.52
3.52
3.51
3.51
3.50
3.49
3.47
3.45
3.41
3.37
3.33
3.27
3.20
(V_DS = 5 V, V_G1 = 5 V, V_G2S = 4 V, R_G = 200 kΩ, Z_O = 50 Ω)
S21
S12
S22
ANG
MAG
ANG
MAG
ANG
178.2
0.009
-64.5
0.976
-1.8
172.9
0.011
18.0
0.995
-3.1
170.2
0.002
61.4
0.990
-5.2
165.9
0.004
77.7
0.986
-6.5
162.6
0.006
87.6
0.986
-8.2
155.5
0.008
87.8
0.990
-12.9
151.0
0.006
94.6
0.984
-15.1
146.9
0.007
80.9
0.982
-17.3
142.6
0.008
87.1
0.977
-19.5
138.2
0.008
78.1
0.973
-21.8
133.4
0.008
74.7
0.968
-24.0
129.0
0.008
84.8
0.963
-26.1
124.2
0.010
72.6
0.957
-28.2
119.4
0.010
67.5
0.950
-30.4
114.5
0.008
78.7
0.943
-32.6
109.7
0.008
82.1
0.939
-34.6
104.9
0.008
85.3
0.931
-36.6
99.9
0.008
95.6
0.924
-38.7
94.9
0.007
97.4
0.916
-40.6
90.2
0.007
122.8
0.909
-42.4
Rev.1.00, Jun.14.2004, page 7 of 8