BB505M Datasheet, PDF (3/9 Pages) Renesas Technology Corp – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB505M
900 MHz Power Gain, Noise Figure Test Circuit
V_G1 V_G2
C4
C5
V_D
C6
Input (50 Ω)
R1
R2
C3
G2
G1
L1 L2
R3
RFC
D
L3 L4
S
Output (50 Ω)
C1
C2
C1, C2 :
C3 :
C4 to C6 :
R1 :
R2 :
R3 :
Variable Capacitor (10 pF MAX)
Disk Capacitor (1000 pF)
Air Capacitor (1000 pF)
220 kΩ
47 kΩ
4.7 kΩ
L1:
10
L2:
26
21
L3:
29
L4:
18
(φ1mm Copper wire)
Unit : mm
RFC : φ1mm Copper wire with enamel 4 turns inside dia 6 mm
Rev.1.00, Jun.14.2004, page 3 of 8