BB505M Datasheet, PDF (4/9 Pages) Renesas Technology Corp – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB505M
Main Characteristics
Maximum Channel Power Dissipation Curve
400
300
200
100
Typical Output Characteristics
20
V_G2S = 4 V
V_G1 = V_DS
15
10
5
223723000kkk^{ΩΩΩ}
0
50
100
150
200
Ambient Temperature Ta (°C)
* Value on the glass epoxy board (50mm × 40mm × 1mm)
Drain Current vs. Gate1 Voltage
20
V_DS = 5 V
R_G = 220 kΩ
15
4V
3V
10
2V
5
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Drain Current vs. Gate Resistance
20
V_DS = 5 V
V_G1 = 5 V
15
V_G2S = 4 V
10
5
0
100
200
500
1000
Gate Resistance R_G (kΩ)
0
1
2
3
4
5
Drain to Source Voltage V_DS (V)
Forward Transfer Admittance
vs. Gate1 Voltage
50
V_DS = 5 V
V_G1 = 5V
40 _{RG = 220 kΩ}
f = 1 kHz
4V
30
3V
2V
20
10
V_G2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Input Capacitance vs.
Gate2 to Source Voltage
4
3
2
V_DS = 5 V
1 _{VG1 = 5 V}
R_G = 220 kΩ
f = 1 MHz
0
0
1
2
3
4
Gate2 to Source Voltage V_G2S (V)
Rev.1.00, Jun.14.2004, page 4 of 8