3SK298 Datasheet, PDF (7/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK298
S Parameter
Freq.
(MHz)
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
S11
MAG.
ANG.
0.994
–5.8
0.993
–11.0
0.986
–16.8
0.980
–22.5
0.973
–27.8
0.950
–33.0
0.936
–38.3
0.924
–43.4
0.912
–48.0
0.893
–52.5
0.874
–57.3
0.859
–62.0
0.846
–66.1
0.829
–69.8
0.810
–74.2
0.802
–78.0
0.791
–81.6
0.778
–84.6
0.756
–88.5
0.751
–92.2
S21
MAG.
ANG.
2.04
173.6
2.02
167.4
2.00
161.5
1.98
155.5
1.94
149.6
1.90
142.6
1.86
137.1
1.83
131.6
1.77
126.8
1.71
121.0
1.67
115.5
1.64
111.1
1.58
106.7
1.50
102.1
1.46
97.1
1.44
92.7
1.38
88.9
1.34
84.2
1.30
80.2
1.26
75.9
(V_DS = 6 V, V_G2S = 3 V, I_D = 10 mA, Z_O = 50 Ω)
S12
S22
MAG.
ANG.
MAG.
ANG.
0.00116 76.9
0.993
–2.2
0.00132 85.7
0.993
–4.5
0.00229 78.2
0.991
–6.4
0.00313 73.5
0.990
–8.5
0.00427 68.7
0.987
–10.5
0.00473 63.9
0.985
–12.5
0.00536 64.3
0.982
–14.4
0.00561 64.5
0.979
–16.2
0.00562 60.9
0.975
–18.2
0.00640 53.5
0.971
–20.2
0.00638 49.3
0.967
–22.0
0.00647 49.0
0.964
–23.9
0.00667 50.2
0.960
–25.8
0.00694 49.3
0.955
–27.6
0.00661 46.6
0.952
–29.4
0.00618 43.7
0.948
–31.2
0.00622 44.7
0.944
–33.2
0.00615 43.6
0.940
–35.1
0.00576 45.1
0.935
–36.8
0.00562 40.7
0.932
–38.5
Rev.3.00 Aug 10, 2005 page 7 of 8