3SK298 Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK298
Absolute Maximum Ratings
Item
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V_DS
V_G1S
V_G2S
I_D
Pch
Tch
Tstg
Ratings
12
±8
±8
25
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test conditions
Drain to source breakdown voltage
V_(BR)DSX
12
Gate 1 to source breakdown voltage V_(BR)G1SS ±8
Gate 2 to source breakdown voltage V_{(BR) G2SS} ±8
Gate 1 cutoff current
I_G1SS
—
Gate 2 cutoff current
I_G2SS
—
Drain current
I_DS(on)
0.5
Gate 1 to source cutoff voltage
V_G1S(off)
0
Gate 2 to source cutoff voltage
V_G2S(off)
0
Forward transfer admittance
|y_fs|
16
Input capacitance
Output capacitance
Ciss
2.4
Coss
0.8
—
—
V I_D = 200 µA , V_G1S = –3 V,
V_G2S = –3 V
—
—
V
I_G1 = ±10 µA, V_G2S = V_DS = 0
—
—
V
I_G2 = ±10 µA, V_G1S = V_DS = 0
—
±100
nA V_G1S = ±6 V, V_G2S = V_DS = 0
—
±100
nA V_G2S = ±6 V, V_G1S = V_DS = 0
—
10
mA V_DS = 6 V, V_G1S = 0.75 V,
V_G2S = 3 V
— +1.0
V V_DS = 10 V, V_G2S = 3 V,
I_D = 100 µA
— +1.0
V V_DS = 10 V, V_G1S = 3 V,
I_D = 100 µA
20
—
mS V_DS = 6 V, V_G2S = 3 V,
I_D = 10 mA, f = 1 kHz
2.9
3.4
pF V_DS = 6 V, V_G2S = 3 V,
1.0
1.4
pF ^ID ^{= 10 mA, f = 1 MHz}
Reverse transfer capacitance
Crss
— 0.023 0.04 pF
Power gain
Noise figure
PG
22
25
—
dB V_DS = 6 V, V_G2S = 3 V,
NF
—
1.0
1.8
dB ^ID ^{= 10 mA, f = 200 MHz}
Power gain
Noise figure
PG
12
15
—
dB V_DS = 6 V, V_G2S = 3 V,
NF
—
3.2
4.5
dB ^ID ^{= 10 mA, f = 900 MHz}
Noise figure
NF
—
2.8
3.5
dB V_DS = 6 V, V_G2S = 3 V,
I_D = 10 mA, f = 60 MHz
Rev.3.00 Aug 10, 2005 page 2 of 8