3SK298 Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK298
Maximum Channel Power
Dissipation Curve
200
150
100
50
0
50
100
150
200
Ambient Temperature Ta (°C)
Drain Current vs. Gate1 to Source Voltage
20
3.0 V
16 ^{2.5 V}
2.0 V
1.5 V
V_DS = 6 V
Pulse test
12
8
1.0 V
4
V_G2S = 0.5 V
0
1
2
3
4
5
Gate1 to source voltage V_G1S (V)
Forward Transfer Admittance vs.
Gate1 to Source Voltage
30
V_DS = 6 V
f = 1 kHz
24
V_G2S = 3.0 V
18
2.5 V
12
2.0 V
1.5 V
6
1.0 V
0.5 V
0
0.4 0.8 1.2 1.6 ^2.0
Gate1 to source voltage V_G1S (V)
Typical Output Characteristics
20
V_G2S = 3 V
1.4 V
Pulse test
16
1.2 V
12
1.0 V
8
0.8 V
0.6 V
4
V_G1S = 0.4 V
0
2
4
6
8 10
Drain to source voltage V_DS (V)
Drain Current vs. Gate2 to Source Voltage
20
3.0 V
V_DS = 6 V
16
2.5 V
2.0 V
1.5 V
Pulse test
12
1.0 V
8
4
V_G1S = 0.5 V
0
1
2
3
4
5
Gate2 to source voltage V_G2S (V)
Power Gain vs. Drain Current
30
24
18
12
6
0
1
2
V_DS = 6 V
V_G2S = 3 V
f = 200 MHz
5
10
20
Drain current I_D (mA)
Rev.3.00 Aug 10, 2005 page 3 of 8