3SK297 Datasheet, PDF (7/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK297
S Parameter
Freq.
(MHz)
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
S11
MAG.
ANG.
0.994
–5.8
0.993
–11.0
0.986
–16.8
0.980
–22.5
0.973
–27.8
0.950
–33.0
0.936
–38.3
0.924
–43.4
0.912
–48.0
0.893
–52.5
0.874
–57.3
0.859
–62.0
0.846
–66.1
0.829
–69.8
0.810
–74.2
0.802
–78.0
0.791
–81.6
0.778
–84.6
0.756
–88.5
0.751
–92.2
S21
MAG.
ANG.
2.04
173.6
2.02
167.4
2.00
161.5
1.98
155.5
1.94
149.6
1.90
142.6
1.86
137.1
1.83
131.6
1.77
126.8
1.71
121.0
1.67
115.5
1.64
111.1
1.58
106.7
1.50
102.1
1.46
97.1
1.44
92.7
1.38
88.9
1.34
84.2
1.30
80.2
1.26
75.9
(V_DS = 6 V, V_G2S = 3 V, I_D = 10 mA, Z_O = 50 Ω)
S12
S22
MAG.
ANG.
MAG.
ANG.
0.00116
76.9
0.993
–2.2
0.00132
85.7
0.993
–4.5
0.00229
78.2
0.991
–6.4
0.00313
73.5
0.990
–8.5
0.00427
68.7
0.987
–10.5
0.00473
63.9
0.985
–12.5
0.00536
64.3
0.982
–14.4
0.00561
64.5
0.979
–16.2
0.00562
60.9
0.975
–18.2
0.00640
53.5
0.971
–20.2
0.00638
49.3
0.967
–22.0
0.00647
49.0
0.964
–23.9
0.00667
50.2
0.960
–25.8
0.00694
49.3
0.955
–27.6
0.00661
46.6
0.952
–29.4
0.00618
43.7
0.948
–31.2
0.00622
44.7
0.944
–33.2
0.00615
43.6
0.940
–35.1
0.00576
45.1
0.935
–36.8
0.00562
40.7
0.932
–38.5
Rev.3.00 Aug 10, 2005 page 7 of 8