3SK297 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK297
Noise Figure vs. Drain to Source Voltage
5
4
3
2
1
V_G2S = 3 V
I_D = 10 mA
f = 900 MHz
0
2
4
6
8 10
Drain to source voltage V_DS (V)
Rev.3.00 Aug 10, 2005 page 5 of 8