3SK297 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK297
Noise Figure vs. Drain Current
3.0
V_DS = 6 V
V_G2S = 3 V
2.4
f = 200 MHz
1.8
1.2
0.6
0
1
2
5
10
20
Drain current I_D (mA)
Noise Figure vs. Drain to Source Voltage
2.0
1.6
1.2
0.8
0.4
V_G2S = 3 V
I_D = 10 mA
f = 200 MHz
0
2
4
6
8 10
Drain to source voltage V_DS (V)
Noise Figure vs. Drain Current
10
V_DS = 6 V
V_G2S = 3 V
8
f = 900 MHz
6
4
2
0
1
2
5
10
20
Drain current I_D (mA)
Power Gain vs. Drain to Source Voltage
30
24
18
12
6
V_G2S = 3 V
I_D = 10 mA
f = 200 MHz
0
2
4
6
8
10
Drain to source voltage V_DS (V)
Power Gain vs. Drain Current
20
16
12
8
4
0
1
2
V_DS = 6 V
V_G2S = 3 V
f = 900 MHz
5
10
20
Drain current I_D (mA)
Power Gain vs. Drain to Source Voltage
20
16
12
8
4
V_G2S = 3 V
I_D = 10 mA
f = 900 MHz
0
2
4
6
8 10
Drain to source voltage V_DS (V)
Rev.3.00 Aug 10, 2005 page 4 of 8