H8S2668 Datasheet, PDF (647/667 Pages) Renesas Technology Corp – Renesas 16-Bit Single-Chip Microcomputer H8S Family/H8S/2600 Series

Section 21 Electrical Characteristics
21.1.6 Flash Memory Characteristics
Table 21.12 Flash Memory Characteristics
Conditions: V_CC = 3.0 V to 3.6 V, AV_CC = 3.0 V to 3.6 V, V_ref = 3.0 V to AV_CC,
V_SS = AV_SS = 0 V, T_a = 0°C to 75°C (program/erase operating temperature range:
regular specifications), T_a = 0°C to 85°C (program/erase operating temperature
range: wide-range specifications)
Item
Programming time^{*1 *2 *4}
Erase time^{*1 *3 *6}
Rewrite times
Data retention time^*3
Programming Wait time after SWE bit
setting^*1
Wait time after PSU bit
setting^*1
Wait time after P bit
setting^{*1 *4}
Wait time after P bit
clearing^*1
Wait time after PSU bit
clearing^*1
Wait time after PV bit
setting^*1
Wait time after H'FF
dummy write^*1
Wait time after PV bit
clearing^*1
Wait time after SWE bit
clearing^*1
Maximum number of
writes^{*1 *4}
Symbol Min
Typ
Max
t_P
—
10
200
t_E
N_WEC
t_DRP
x
—
50
1000
100^*1
10
1
10000^*2 —
—
—
—
—
Test
Unit
Conditions
ms/
128 bytes
ms/
128 bytes
Times
Years
µs
y
50
—
—
µs
z z1 —
—
30
µs
z2 —
—
200
µs
z3 —
—
10
µs
α
5
—
—
µs
1≤n≤6
7 ≤ n ≤ 1000
Additional
program-ming
wait
β
5
—
—
µs
γ
4
—
—
µs
ε
2
—
—
µs
η
2
—
—
µs
θ
100
—
—
µs
N
—
—
1000^*5 Times
Rev. 3.00 Feb 22, 2006 page 607 of 624
REJ09B0281-0300