RJJ0621DPP_15 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – P Channel Power MOS FET High Speed Switching

RJJ0621DPP
Drain to Source on State Resistance
vs. Temperature
120
V_GS = –10 V
Pulse Test
100
I_D = –25 A
80
60
–12.5 A
–5 A
40
20
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverce Recovery Time
1000
di/dt = –100 A/ µs
V_GS = 0 V
Tc = 25°C
100
10
1
–1
–10
–100
Drain to Source Voltage V_DS (V)
Dynamic Input Characteristics
0
0
I_D = –25 A
–10 V
–20
V_DD = –60 V
–4
–30 V
–30 V
–40
–10 V
–8
V_DD = –60 V
–60
–12
–80
0
8
16
24 32
Gate Charge Qg (nc)
–16
40
Forward Transfer Admittance vs.
Drain Current
100
Tc = –25°C
10
25°C
75°C
1
0.1
–0.1
V_DS = –10 V
Pulse Test
–1
–10
Drain Current I_D (A)
–100
Typical Capacitance vs.
Drain to Source Voltage
1000
V_GS = 0
f = 1 MHz
Ciss
100
Coss
10
Crss
1
–1
–10
–100
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
100
10
1
–1
td(off)
tf
tr
td(on)
V_GS = –10 V, V_DD = –30 V
P_W = 5 µs, duty ≤ 1%
R_G = 25 Ω
–10
–100
Drain Current I_D (A)
REJ03G1624-0200 Rev.2.00 Jun 16, 2008
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