RJJ0621DPP_15 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – P Channel Power MOS FET High Speed Switching

RJJ0621DPP
Electrical Characteristics
Item
Drain to source breakdown voltage
Drain to source leakage current
Gate to source leak current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Symbol
V_(BR)DSS
I_DSS
I_GSS
I_GSS
V_GS(off)
R_DS(on)
Ciss
Coss
Crss
t_d(on)
t_r
t_d(off)
t_f
V_DF
Min.
–60
—
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
–1.7
45
65
1550
190
100
15
25
100
50
–0.9
Max.
—
–1
0.1
–0.1
–2.5
56
95
—
—
—
—
—
—
—
–1.5
Unit
V
µA
µA
µA
V
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
V
(Tc = 25°C)
Conditions
I_D = –10 mA, V_GS = 0 V
V_DS = –60 V, V_GS = 0 V
V_GS = +10 V, V_DS = 0 V
V_GS = –20 V, V_DS = 0 V
I_D = –1 mA, V_DS = –10 V
I_D = –12.5 A, V_GS = –10 V
I_D = –12.5 A, V_GS = –4.5 V
V_DS = –10 V
V_GS = 0 V
f = 1 MHz
V_DD = –30 V
I_D = –12.5 A
V_GS = –10 V
R_G = 25 Ω
I_F = –12.5 A, V_GS = 0 V
REJ03G1624-0200 Rev.2.00 Jun 16, 2008
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