RJJ0621DPP_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – P Channel Power MOS FET High Speed Switching

RJJ0621DPP
Main Characteristics
Power vs. Temperature Derating
50
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
–50
–8 V –7 V
–6 V
–40 _{–10 V}
–5 V
–4 V
–30
–20
V_GS = –3 V
–10
Pulse Test
0
–1 –2 –3 –4 –5
Drain to Source Voltage V_DS (V)
Static Drain to Source on State Resistance
vs.Gate to Source Voltage
150
Pulse Test
Tc = 25°C
100
I_D = –25 A
50
–5 A
–12.5 A
0
–2 –4 –6 –8 –10
Gate to Source Voltage V_GS (V)
Maximum Safe Operation Area
–100
–10
PW
= _{10 ms}
–1
Operation in
this area is
–0.1 ^{limited by RDS(on)}
Ta = 25°C
1 shot Pulse
–0.01
–0.1
–1
–10
–100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
–30
V_DS = –10 V
Pulse Test
–20
–10
Tc = 75°C
25°C
–25°C
0
0
–1 –2 –3 –4 –5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
Tc = 25°C
100
V_GS = –4.5 V
–10 V
10
–1
–10
–100
Drain Current I_D (A)
REJ03G1624-0200 Rev.2.00 Jun 16, 2008
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