RJH60M3DPQ-E0 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – 600V - 17A - IGBT Application: Inverter

RJH60M3DPQ-E0
1000
Typical Capacitance vs.
Collector to Emitter Voltage
1000
Cies
100
Coes
10
V_GE = 0 V
f = 1 MHz
Cres
Tc = 25°C
1
0 50 100 150 200 250 300
Collector to Emitter Voltage V_CE (V)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
200
160
Tc = 150°C
120
80
25°C
40
V_CC = 300 V
I_F = 17 A
0
0
40 80 120 160 200
Diode Current Slope di/dt (A/μs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
16
V_CC = 300 V
I_F = 17 A
12
8
Tc = 150°C
4
25°C
0
0
40 80 120 160 200
Diode Current Slope di/dt (A/μs)
Preliminary
Dynamic Input Characteristics (Typical)
800
16
V_GE
600
12
400
8
200
V_CE
V_CC = 300 V ⁴
I_C = 17 A
Tc = 25°C
0
0
0 10 20 30 40 50 60 70
Gate Charge Qg (nC)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
0.5
V_CC = 300 V
I_F = 17 A
0.4
0.3
Tc = 150°C
0.2
0.1
25°C
0
0
40 80 120 160 200
Diode Current Slope di/dt (A/μs)
Forward Current vs. Forward Voltage (Typical)
50
Tc = 150°C
40
25°C
30
20
10
V_GE = 0 V
Pulse Test
0
0 0.4 0.8 1.2 1.6 2.0 2.4
C-E Diode Forward Voltage V_CEF (V)
R07DS1086EJ0200 Rev.2.00
Jun 13, 2013
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