RJH60M3DPQ-E0 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – 600V - 17A - IGBT Application: Inverter

RJH60M3DPQ-E0
Switching Characteristics (Typical) (1)
1000
tf
100
td(off)
td(on)
10
tr
V_CC = 300 V, V_GE = 15 V
Rg = 5 Ω, Tc = 150°C
1
1
10
100
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
V_CC = 300 V, V_GE = 15 V
I_C = 17 A, Tc = 150°C
100
10
1
tf
td(off)
td(on)
tr
10
100
Gate Resistance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
V_CC = 300 V, V_GE = 15 V
I_C = 17 A, Rg = 5 Ω
100
td(off)
tf
td(on)
10
25
tr
50 75
100 125 150
Channel Temperature Tc (°C)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
10
V_CC = 300 V, V_GE = 15 V
Rg = 5 Ω, Tc = 150°C
1
Eoff
Eon
0.1
1
10
100
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (4)
10
V_CC = 300 V, V_GE = 15 V
I_C = 17 A, Tc = 150°C
1
Eoff
Eon
0.1
1
10
100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
10
V_CC = 300 V, V_GE = 15 V
I_C = 17 A, Rg = 5 Ω
1
Eoff
Eon
0.1
25 50 75 100 125 150
Channel Temperature Tc (°C)
(Inductive load)
R07DS1086EJ0200 Rev.2.00
Jun 13, 2013
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