RJH60M3DPQ-E0 Datasheet, PDF (4/10 Pages) Renesas Technology Corp – 600V - 17A - IGBT Application: Inverter

RJH60M3DPQ-E0
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Tc = 25°C
Pulse Test
4
3
I_C = 35 A
2
17 A
1
8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Typical Transfer Characteristics
50
40
Tc = 150°C
25°C
30
20
10
V_CE = 10 V
Pulse Test
0
0
4
8
12
16
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
8
I_C = 10 mA
6
1 mA
4
2
V_CE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Junction Temparature Tj (°C)
R07DS1086EJ0200 Rev.2.00
Jun 13, 2013
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Tc = 150°C
Pulse Test
4
3
I_C = 35 A
2
17 A
1
8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
4
V_GE = 15 V
Pulse Test
3
I_C = 35 A
17 A
2
3A
1
0
−25 0 25 50 75 100 125 150
Case Temparature Tc (°C)
Frequency Characteristics (Typical)
16
12
0
Collector current wave
(Square wave)
Tj = 125°C
8
Tc = 90°C
V_CE = 400 V
V_GE = 15 V
Rg = 5 Ω
4
duty = 50%
0
1
10
100
1000
Frequency f (kHz)
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