RJH60F4DPK_11 Datasheet, PDF (6/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH60F4DPK
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
10
Tc = 25°C
Preliminary
1 ^D=1
0.5
0.2
0.1
0.0⁵
0.1
0.02 ^{1 shot pulse}
0.01
0.01
10 μ
100 μ
θj − c(t) = γs (t) • θj − c
θj − c = 0.53 °C/W, Tc = 25 °C
P_DM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
10
Tc = 25°C
D=1
1
0.5
0.2
0.1
0.1 0.⁰⁵
0^.02
0.01
1 shot pulse
0.01
10 μ
100 μ
θj – c(t) = γs (t) • θj – c
θj – c = 2°C/W, Tc = 25°C
P_DM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Waveform
90%
Diode clamp
Rg
L
D.U.T
V_CC
V_GE
10%
90%
I_C
V_CE
10%
td(on) tr
ton
90%
10%
1%
td(off) tf ttail
toff
10%
R07DS0235EJ0300 Rev.3.00
Nov 17, 2010
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