RJH60F4DPK_11 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH60F4DPK
Collector to Emitter Diode Forward Voltage vs.
Diode Forward Current Characteristics (Typical)
100
V_GE = 0 V
Pulse Test
80
60
40
20
0
0
1
2
3
4
5
Collector to Emitter Diode
Forward Voltage V_ECF (V)
Dynamic Input Characteristics (Typical)
800
16
V_GE
V_CE
600
V_CE = 600 V
12
300 V
400
8
200
0
0
4
V_CE = 600 V
300 V
I_C = 30 A ₀
20 40 60 80 100
Gate Charge Qg (nC)
Preliminary
10000
1000
Typical Capacitance vs.
Colloctor to Emitter Voltage
Cies
100
Coes
Cres
10
V_GE = 0 V
f = 1 MHz
Ta = 25°C
1
0 50 100 150 200 250 300
Colloctor to Emitter Voltage V_CE (V)
R07DS0235EJ0300 Rev.3.00
Nov 17, 2010
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