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| RJH60F4DPK_11 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching | |||
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RJH60F4DPK
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
ICES
ï¾
Gate to emitter leak current
IGES
ï¾
Gate to emitter cutoff voltage
VGE(off)
4
Collector to emitter saturation voltage VCE(sat)
ï¾
VCE(sat)
ï¾
Input capacitance
Cies
ï¾
Output capacitance
Coes
ï¾
Reverse transfer capacitance
Cres
ï¾
Switching time
td(on)
ï¾
tr
ï¾
td(off)
ï¾
tf
ï¾
C-E diode forward voltage
VECF1
ï¾
VECF2
ï¾
C-E diode reverse recovery time
trr
ï¾
Notes: 3. Pulse test
Typ
ï¾
ï¾
ï¾
1.4
1.7
1900
93
33
45
150
85
80
1.6
1.8
140
Preliminary
Max
100
±1
8
1.82
ï¾
ï¾
ï¾
ï¾
ï¾
ï¾
ï¾
ï¾
2.1
ï¾
ï¾
Unit
ïA
ïA
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
V
ns
(Tj = 25°C)
Test Conditions
VCE = 600V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10V, IC = 1 mA
IC = 30 A, VGE = 15V Note3
IC = 60 A, VGE = 15V Note3
VCE = 25 V
VGE = 0 V
f = 1 MHz
IC = 30 A,
VCE = 400 V, VGE = 15 V
Rg = 5 ïï Note3
Inductive load
IF = 20 A Note3
IF = 40 A Note3
IF = 20 A
diF/dt = 100 A/ïs
R07DS0235EJ0300 Rev.3.00
Nov 17, 2010
Page 2 of 7
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