RJH60D7BDPQ-E0_16 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – 600V - 50A - IGBT

RJH60D7BDPQ-E0
10000
Typical Capacitance vs.
Collector to Emitter Voltage
Cies
1000
100
Coes
V_GE = 0 V
f = 1 MHz
Cres
10 ^{Tc = 25°C}
0 50 100 150 200 250 300
Collector to Emitter Voltage V_CE (V)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
300
V_CC = 300 V
250
I_F = 50 A
200
150
Tc = 150°C
100
50
25°C
0
0
40 80 120 160 200
Diode Current Slope di/dt (A/μs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
16
V_CC = 300 V
I_F = 50 A
12
8
Tc = 150°C
4
25°C
0
0
40 80 120 160 200
Diode Current Slope di/dt (A/μs)
Preliminary
Dynamic Input Characteristics (Typical)
800
16
V_CE = 300 V
I_C = 50 A
Tc = 25°C
600
V_GE
12
400
8
200
4
V_CE
0
0
40
0
80 120 160 200
Gate Charge Qg (nc)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
0.5
V_CC = 300 V
I_F = 50 A
0.4
0.3
Tc = 150°C
0.2
0.1
25°C
0
0
40 80 120 160 200
Diode Current Slope di/dt (A/μs)
Forward Current vs. Forward Voltage (Typical)
120
V_CE = 0 V
100 ^{Pulse Test}
80
Tc = 150°C
60
40
25°C
20
0
0
1
2
3
4
C-E Diode Forward Voltage V_CEF (V)
R07DS0795EJ0300 Rev.3.00
Jul 20, 2016
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