RJH60D7BDPQ-E0_16 Datasheet, PDF (4/10 Pages) Renesas Technology Corp – 600V - 50A - IGBT

RJH60D7BDPQ-E0
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Tc = 25°C
Pulse Test
4
I_C = 50 A
90 A
3
2
1
4
8
12
16
20
Gate to Emitter Voltage V_GE (V)
Typical Transfer Characteristics
200
Tc = 25°C
160
150°C
120
80
40
V_CE = 10 V
Pulse Test
0
0
4
8
12 16 20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
8
6
I_C = 10 mA
4
1 mA
2
V_CE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Case Temparature Tc (°C)
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Tc = 150°C
Pulse Test
4
I_C = 50 A
90 A
3
2
1
4
8
12
16
20
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
2.4
V_GE = 15 V
2.2 ^{Pulse Test}
2.0
I_C = 90 A
1.8
50 A
1.6
25 A
1.4
1.2
−25 0 25 50 75 100 125 150
Case Temparature Tc (°C)
Frequency Characteristics (Typical)
30
25
0
Collector current wave
20
(Square wave)
15
10
5 ^{Tj = 125°C, Tc = 90°C}
V_CE = 400 V, V_GE = 15 V
Rg = 5 Ω, duty = 50%
0
1
10
100
Frequency f (kHz)
1000
R07DS0795EJ0300 Rev.3.00
Jul 20, 2016
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