RJH60D7BDPQ-E0_16 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – 600V - 50A - IGBT

RJH60D7BDPQ-E0
Switching Characteristics (Typical) (1)
1000
td(off)
tf
100
td(on)
tr
V_CC = 300 V, V_GE = 15 V
Rg = 5 Ω, Tc = 150°C
10
1
10
100
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (3)
3000
1000
V_CC = 300 V, V_GE = 15 V
I_C = 50 A, Tc = 150°C
300
100
30
1
td(off)
tr
tf
td(on)
10
100
Gate Resistance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
V_CC = 300 V, V_GE = 15 V
I_C = 50 A, Rg = 5 Ω
td(off)
tr
100
tf
td(on)
10
25 50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
100
V_CC = 300 V, V_GE = 15 V
Rg = 5 Ω, Tc = 150°C
10
Eoff
1
Eon
0.1
0.01
1
10
100
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (4)
10
Eoff
1
Eon
V_CC = 300 V, V_GE = 15 V
0.1 ^{IC = 50 A, Tc = 150°C}
1
10
100
Gate Resistance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
10
V_CC = 300 V, V_GE = 15 V
I_C = 50 A, Rg = 5 Ω
Eoff
1
Eon
0.1
25
50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
R07DS0795EJ0300 Rev.3.00
Jul 20, 2016
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