RJH60D6DPK_10 Datasheet, PDF (6/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT Application: Inverter

RJH60D6DPK
1
Thermal Impedance vs. Pulse Width (IGBT)
0.1
0.01
0.001
100 μ
1m
10 m
100 m
1
Pulse Width PW (s)
Tc = 25°C
Single pulse
10
100
Thermal Impedance vs. Pulse Width (Diode)
10
1
0.1
0.01
100 μ
1m
10 m
100 m
1
Pulse Width PW (s)
Tc = 25°C
Single pulse
10
100
Preliminary
Switching Time Test Circuit
Diode clamp/
D.U.T
L
D.U.T/
V_CC
Rg
Driver
Waveform
90%
Vin
10%
90%
90%
Ic
td(on)
10%
tr
td(off)
ton
toff
10%
tf
R07DS0164EJ0300 Rev.3.00
Nov 16, 2010
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