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| RJH60D6DPK_10 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT Application: Inverter | |||
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Preliminary Datasheet
RJH60D6DPK
Silicon N Channel IGBT
Application: Inverter
R07DS0164EJ0300
Rev.3.00
Nov 16, 2010
Features
ï· Short circuit withstand time (5 ïs typ.)
ï· Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)
ï· Built in fast recovery diode (100 ns typ.) in one package
ï· Trench gate and thin wafer technology
ï· High speed switching
tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 40 A, Rg = 5 ï, Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
12 3
1. Gate
G
2. Collector
3. Emitter
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Value at Tc = 25ï°C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
iDF
iDF(peak) Note1
PC Note2
ï±j-c Note2
ï±j-cd Note2
Tj
Tstg
Ratings
600
±30
80
40
160
30
120
260
0.48
2.10
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0164EJ0300 Rev.3.00
Nov 16, 2010
Page 1 of 7
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