RJH60D6DPK_10 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT Application: Inverter

RJH60D6DPK
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
8
6
I_C = 40 A
80 A
4
Ta = 25°C
Pulse Test
2
0
0
4
8
12 16 20
Gate to Emitter Voltage V_GE (V)
Typical Transfer Characteristics
160
Ta = 25°C
120
150°C
80
40
V_CE = 10 V
Pulse Test
0
0
4
8
12
16
Gate to Emitter Voltage V_GE (V)
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
8
6
I_C = 40 A
Ta = 150°C
Pulse Test
80 A
4
2
0
0
4
8
12 16 20
Gate to Emitter Voltage V_GE (V)
Diode Forward Characteristics (Typical)
120
100
Ta = 25°C
150°C
80
60
40
20
V_CE = 0 V
Pulse Test
0
0
1
2
3
4
Forward Voltage V_F (V)
R07DS0164EJ0300 Rev.3.00
Nov 16, 2010
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