RJH1CV5DPQ-E0_13 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – 1200V - 25A - IGBT Application: Inverter

RJH1CV5DPQ-E0
10000
Typical Capacitance vs.
Collector to Emitter Voltage
1000
Cies
100
Coes
10
V_GE = 0 V
f = 1 MHz
Tc = 25°C
1
0
40 80
Cres
120 160 200
Collector to Emitter Voltage V_CE (V)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
600
I_F = 25 A
500
400
300
Tc = 150°C
200
25°C
100
0
0
40 80 120 160 200
Diode Current Slope diF/dt (A/µs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
30
I_F = 25 A
25
20
Tc = 150°C
15
10
25°C
5
0
0
40 80 120 160 200
Diode Current Slope diF/dt (A/µs)
Preliminary
Dynamic Input Characteristics (Typical)
800
I_C = 25 A
V_CC = 300 V
Tc = 25°C
600
16
V_GE
12
400
8
200
4
V_CE
0
0
0
20 40 60 80 100
Gate Charge Qg (nc)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
3.0
I_F = 25 A
2.5
2.0
Tc = 150°C
1.5
1.0
0.5
25°C
0
0
40 80 120 160 200
Diode Current Slope di_F/dt (A/µs)
Forward Current vs. Forward Voltage (Typical)
80
60
Tc = 25°C
150°C
40
20
V_CE = 0 V
Pulse Test
0
0
1
2
3
4
C-E Diode Forward Voltage V_CEF (V)
R07DS0523EJ0700 Rev.7.00
Jun 12, 2013
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