RJH1CV5DPQ-E0_13 Datasheet, PDF (4/10 Pages) Renesas Technology Corp – 1200V - 25A - IGBT Application: Inverter

RJH1CV5DPQ-E0
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
4
3
I_C = 50 A
25 A
2
Tc = 25°C
Pulse Test
1
8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Typical Transfer Characteristics
80
60
Tc= 25°C
150°C
40
20
V_CE = 10 V
Pulse Test
0
0
4
8
12 16 20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
8
I_C = 10 mA
6
4
1 mA
2
V_CE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Case Temparature Tc (°C)
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
4
I_C = 50 A
3
25 A
2
Tc = 150°C
Pulse Test
1
8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
5
V_GE = 15 V
Pulse Test
4
I_C = 50 A
3
25 A
2
1
−25 0 25 50 75 100 125 150
Case Temparature Tc (°C)
Frequency Characteristics (Typical)
20
16
0
Collector current wave
(Square wave)
12
Tj = 125°C
8
Tc = 90°C
V_CE = 400 V
V_GE = 15 V
Rg = 5 Ω
4
duty = 50%
0
1
10
100
1000
Frequency f (kHz)
R07DS0523EJ0700 Rev.7.00
Jun 12, 2013
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