RJH1CV5DPQ-E0_13 Datasheet, PDF (2/10 Pages) Renesas Technology Corp – 1200V - 25A - IGBT Application: Inverter

RJH1CV5DPQ-E0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ Max Unit
Test Conditions
Zero gate voltage collector current
I_CES /I_R
—
—
5
μA V_CE = 1200 V, V_GE = 0
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
I_GES
V_GE(off)
V_CE(sat)
V_CE(sat)
Cies
Coes
Cres
—
—
±1
4.5
—
6.5
—
1.8
2.3
—
2.6
—
—
1150
—
—
70
—
—
30
—
μA V_GE = ±30 V, V_CE = 0
V
V_CE = 10 V, I_C = 1 mA
V
I_C = 25 A, V_GE = 15 V ^Note3
V
I_C = 50 A, V_GE = 15 V ^Note3
pF V_CE = 25 V
pF ^VGE ^{= 0}
pF ^{f = 1 MHz}
Total gate charge
Gate to emitter charge
Gate to collector charge
Qg
—
72
—
nC V_GE = 15 V
Qge
—
8
—
nC ^VCE ^{= 300 V}
Qgc
—
40
—
nC ^{IC = 25 A}
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_total
t_sc
—
42
—
ns V_CC = 600 V
—
24
—
ns ^VGE ^{= 15 V}
—
105
—
ns ^{IC = 25 A}
—
165
—
ns ^{Rg = 5 Ω}
Inductive load
—
1.9
—
mJ
—
1.5
—
mJ
—
3.4
—
mJ
—
5
—
μs V_CC ≤ 720 V, V_GE = 15 V
Tc ≤ 125°C
FRD forward voltage
V_F
—
1.8
—
V
I_F = 25 A ^Note3
FRD reverse recovery time
FRD reverse recovery charge
t_rr
—
170
—
ns I_F = 25 A
Q_rr
—
0.62
—
μC ^diF^{/dt = 100 A/μs}
FRD peak reverse recovery current
I_rr
—
9.2
—
A
Notes: 3. Pulse test.
R07DS0523EJ0700 Rev.7.00
Jun 12, 2013
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