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R1LP0108E_15 Datasheet, PDF (6/17 Pages) Renesas Technology Corp – 1Mb Advanced LPSRAM (128k word x 8bit)
R1LP0108E Series
Operation Table
CS1#
X
H
L
L
L
Note 1.
CS2
WE#
OE#
L
X
X
X
X
X
H
L
X
H
H
L
H
H
H
H: VIH L:VIL X: VIH or VIL
DQ0~7
High-Z
High-Z
Din
Dout
High-Z
Operation
Stand-by
Stand-by
Write
Read
Output disable
Absolute Maximum
Parameter
Symbol
Value
unit
Power supply voltage relative to Vss
Vcc
-0.3 to +7
V
Terminal voltage on any pin relative to Vss
VT
-0.3*1 to Vcc+0.3*2
V
Power dissipation
PT
0.7
W
Operation temperature
Topr*3
R Ver.
I Ver.
0 to +70
-40 to +85
°C
Storage temperature range
Tstg
-65 to 150
°C
Storage temperature range under bias
Tbias*3
R Ver.
I Ver.
0 to +70
-40 to +85
°C
Note 1. –3.0V for pulse ≤ 30ns (full width at half maximum)
2. Maximum voltage is +7V.
3. Ambient temperature range depends on R/I-version. Please see table on page 1.
R10DS0029EJ0300 Rev.3.00
2013.6.21
Page 6 of 15