NP75N04YLG Datasheet, PDF (6/8 Pages) Renesas Technology Corp – N-channel Power MOS FET

NP75N04YLG
Package Drawing (Unit: mm)
8-pin HSON (Mass: 0.128 g TYP.)
Renesas Code: PLSN0008KA-A
Preliminary
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
Equivalent Circuit
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
R07DS1247EJ0100 Rev.1.00
Mar 02, 2015
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