NP75N04YLG Datasheet, PDF (1/8 Pages) Renesas Technology Corp – N-channel Power MOS FET

Preliminary Data Sheet
NP75N04YLG
40 V – 75 A – N-channel Power MOS FET
Application: Automotive
R07DS1247EJ0100
Rev.1.00
Mar 02, 2015
Description
The NP75N04YLG is N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
• Super low on-state resistance
R_DS(on) = 4.8 mΩ MAX. (V_GS = 10 V, I_D = 38 A)
R_DS(on) = 8.3 mΩ MAX. (V_GS = 4.5 V, I_D = 38 A)
• Logic level drive type
• Gate to Source ESD protection diode built in
• Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
Lead Plating
Packing
NP75N04YLG-E1-AY ^*1 Pure Sn (Tin)
Tape 2500 p/reel
Taping (E1 type)
NP75N04YLG-E2-AY ^*1
Taping (E2 type)
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package
8-pin HSON
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Ratings
Drain to Source Voltage (VGS = 0 V)
VDSS
40
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
ID(DC)
±75
Drain Current (pulse) ^*1
ID(pulse)
±225
Total Power Dissipation (TC = 25°C)
PT1
138
Total Power Dissipation (TA = 25°C) ^*2
PT2
1.0
Channel Temperature
Tch
175
Storage Temperature
Tstg
–55 to +175
Repetitive Avalanche Current ^*3
IAR
35
Repetitive Avalanche Energy ^*3
EAR
123
Notes: *1 TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
*2 Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt with 4% Copper area (35 μm)
*3 Tch(peak) ≤ 150°C, RG = 25 Ω
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.09 °C/W
150 °C/W
R07DS1247EJ0100 Rev.1.00
Mar 02, 2015
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