NP75N04YLG Datasheet, PDF (3/8 Pages) Renesas Technology Corp – N-channel Power MOS FET

NP75N04YLG
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
RDS(ON) Limited
100 ^{(VGS=10 V)}
I_D(Pulse) = 225 A
10
Power Dissipation Limited
PW _{= 100 μs}
Preliminary
160
140
120
100
80
60
40
20
0
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25 50 75 100 125 150 175
T_C - Case Temperature - °C
Secondary Breakdown Limited
1
T_C = 25°C
Single Pulse
0.1
0.1
1
10
100
V_DS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
R_th(ch-A) = 150°C/W
10
R_th(ch-C) = 1.09°C/W
1
0.1
Single pulse
Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt
with 4% copper area (35 μm)
0.01
100 μ
1m
10 m 100 m
1
10
100
PW - Pulse Width - s
1000
R07DS1247EJ0100 Rev.1.00
Mar 02, 2015
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