NP52N06SLG_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – SWITCHING P-CHANNEL POWER MOS FET

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
150
Pulsed
VGS = 10 V
100
50
VGS = 4.5 V
0
0
1
2
3
4
5
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE
3
2.5
2
1.5
1
0.5 _{VDS = 10 V}
ID = 1 mA
0
-60 -20 20
60 100 140 180
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
50
Pulsed
40
30
20
VGS = 4.5 V
10
VGS = 10 V
0
1
10
100
1000
ID - Drain Current - A
NP52N06SLG
1000
100
10
1
0.1
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
Tch = −55°C
−25°C
25°C
75°C
125°C
150°C
175°C
0.01
0.001
0
VDS = 10 V
Pulsed
1
2
3
4
5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Tch = −55°C
−25°C
25°C
10
75°C
1
125°C
150°C
175°C
0.1
0.1
VDS = 10 V
Pulsed
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
35
30
ID = 42 A
25
ID = 26 A
20
ID = 10.4 A
15
10
5
Pulsed
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
4
Data Sheet D18202EJ2V0DS