NP52N06SLG_15 Datasheet, PDF (3/10 Pages) Renesas Technology Corp – SWITCHING P-CHANNEL POWER MOS FET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP52N06SLG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP52N06SLG is N-channel MOS FET designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
NP52N06SLG-E1-AY
Pure Sn (Tin)
NP52N06SLG-E2-AY
PACKING
Tape
2500 p/reel
PACKAGE
TO-252 (MP-3ZK)
typ. 0.27 g
FEATURES
• Channel temperature 175 degree rating
• Low on-state resistance
RDS(on) = 17.5 mΩ MAX. (VGS = 10 V, ID = 26 A)
• Logic level drive type
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
±52
A
ID(pulse)
±104
A
Total Power Dissipation (TC = 25°C)
PT1
56
W
Total Power Dissipation (TA = 25°C)
PT2
1.2
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
−55 to +175
°C
Repetitive Avalanche Current ^Note2
IAR
20
A
Repetitive Avalanche Energy ^Note2
EAR
40
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
2.68
125
°C/W
°C/W
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18202EJ2V0DS00 (2nd edition)
Date Published July 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
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2006