NP52N06SLG_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – SWITCHING P-CHANNEL POWER MOS FET

NP52N06SLG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
TC = 25°C
Single pulse
ID(pulse) PW = 100 μs
100
1 ms
10
ID(DC)
RDS(ON) Limited
(at VGS = 10 V)
1
DC
Power Dissipation Limited _{10 ms}
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/W
10
Rth(ch-C) = 2.68°C/W
1
0.1
0.01
100μ
1m
10 m 100 m
1
Single pulse
10
100
1000
PW - Pulse Width - s
Data Sheet D18202EJ2V0DS
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